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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
0.2+/-0.05
(0.22)
RoHS Compliance, DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Silicon MOSFET Power Transistor, 175MHz, 12W
OUTLINE DRAWING
6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
4.9+/-0.15 1.0+/-0.05
2
High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz)
3 INDEX MARK (Gate)
(0.22) (0.25) (0.25)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rthj-c PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Dissipation Junction Temperature Storage Temperature Thermal Resistance CONDITIONS VGS=0V VDS=0V Zg=Zl=50 Tc=25C RATINGS 50 +/- 20 4 2 50 150 -40 to +125 2.5 UNIT V V A W W
C C C/W
Junction to Case
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz,VDD=7.2V Pin=1.0W,Idq=1.0A VDD=9.2V,Po=12W(Pin Control) f=175MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN. 1.8 11.5 55 LIMITS TYP. MAX. 10 1 4.4 12 57 Not destroy UNIT uA uA V W % -
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVS1
MITSUBISHI ELECTRIC 1/7
10 Jan 2006
2.0+/-0.05
FEATURES
3.5+/-0.05
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
Vgs-Ids CHARACTERISTICS
Ta=+25C Vds=10V
RoHS Compliance, TYPICAL CHARACTERISTICS
60 CHANNEL DISSIPATION Pch(W) 50 40
On PCB(*1) with Heat-sink
Silicon MOSFET Power Transistor, 175MHz, 12W
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
10 8 Ids(A),GM(S) 6 4
GM
Ids
30 20 10 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(C) 200
On PCB(*1)
2 0 0 1 2 3 4 Vgs(V) 5 6 7
Vds-Ids CHARACTERISTICS 9
Ta=+25C
Vds VS. Ciss CHARACTERISTICS 160
Vgs=7.5V Ta=+25C f=1MHz
8 7
140 120 Ciss(pF) 100 80 60 40 20 0
Vgs=6.0V
6 Ids(A) 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10
Vgs=5.5V
Vgs=5.0V Vgs=4.5V Vgs=4.0V Vgs=3.5V
0
5
10 Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS 120 100 80 Coss(pF) Crss(pF) 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD12MVS1
MITSUBISHI ELECTRIC 2/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
Pin-Po CHARACTERISTICS @f=175MHz 90
Po Ta=25C f=175MHz Vdd=7.2V Idq=1.0A
RoHS Compliance, TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Silicon MOSFET Power Transistor, 175MHz, 12W
14 40 Po(dBm) , Gp(dB) , Idd(A)
Ta=+25C f=175MHz Vdd=7.2V Idq=1.0A Po
80
Gp
12 Pout(W) , Idd(A) 10 8 6 4 2
80 70 d(%)
10 Jan 2006
30
60 d(%)
d
60 50
Idd
20
40
10
20
40 30 20 1000
0 -5 0 5 10 15 Pin(dBm) 20 25 30
0
0 0 200 400 600 Pin(mW) 800
Vdd-Po CHARACTERISTICS @f=175MHz 25 20 15 Po(W)
Ta=25C f=175MHz Pin=0.3W Icq=700mA Zg=ZI=50 ohm Po
Vgs-Ids CHARACTORISTICS 2 5 4 8 Vds=10V Tc=-25~+75C 6 Ids(A),GM(S) +25C
-25C +75C
Idd
3 Idd(A)
4
10 5 0 4 6 8 Vdd(V) 10 12
2 1 0
2
0 0 2 4 Vgs(V) 6 8
RD12MVS1
MITSUBISHI ELECTRIC 3/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, TEST CIRCUIT (f=175MHz)
Silicon MOSFET Power Transistor, 175MHz, 12W
RF-in
Copper board spring t=0.1mm
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout* Zo=50
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
f=175MHz Zout*
Zin*=0.965-j7.73 Zout*=1.73-j1.14
f=175MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance
RD12MVS1
MITSUBISHI ELECTRIC 4/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
S12 (mag) 0.018 0.016 0.016 0.016 0.016 0.015 0.016 0.012 0.014 0.013 0.012 0.012 0.014 0.012 0.009 0.009 0.009 0.004 0.008 0.007 0.005 0.006 0.004 0.003 0.003 0.003 0.003 0.002 0.004 0.001 0.004 0.002 0.003 0.003 0.006 0.003 0.007 0.006 0.003 0.003 (ang) -3.3 1.4 -10.9 -14.1 -18.2 -18.3 -15.1 -30.4 -29.9 -24.5 -39.4 -53.1 -32.9 -32.2 -29.2 -21.6 -32.5 -37.2 -25.9 -21.3 -46.6 -25.0 -40.9 -33.6 17.7 25.4 51.4 5.7 5.6 -16.1 58.8 -6.7 40.4 77.0 46.5 64.5 60.3 69.7 80.3 86.7 (mag) 0.761 0.765 0.778 0.787 0.800 0.796 0.810 0.836 0.858 0.855 0.859 0.860 0.886 0.898 0.898 0.893 0.903 0.910 0.917 0.925 0.922 0.922 0.939 0.939 0.938 0.930 0.932 0.946 0.949 0.940 0.935 0.943 0.945 0.948 0.946 0.950 0.946 0.952 0.959 0.950 S22 (ang) -160.3 -168.1 -170.7 -170.3 -171.7 -172.3 -172.3 -172.2 -172.2 -173.0 -173.3 -173.4 -174.5 -174.6 -175.0 -175.6 -175.7 -176.6 -176.8 -177.3 -177.6 -177.6 -178.0 -178.9 -179.3 -179.5 -179.9 -179.9 179.3 179.0 178.8 178.2 177.5 176.8 176.7 176.7 176.0 175.7 175.0 174.8
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq. [MHz] 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.824 0.816 0.817 0.829 0.837 0.845 0.852 0.860 0.870 0.876 0.886 0.891 0.902 0.903 0.909 0.907 0.912 0.923 0.928 0.934 0.932 0.936 0.932 0.935 0.939 0.939 0.943 0.945 0.943 0.939 0.943 0.948 0.951 0.953 0.952 0.954 0.944 0.951 0.954 0.955 (ang) -159.3 -169.0 -171.7 -172.8 -173.4 -173.9 -174.0 -174.3 -175.0 -175.0 -175.6 -175.8 -175.9 -176.2 -176.7 -177.6 -177.9 -178.3 -178.5 -178.6 -178.8 -179.2 179.6 179.1 179.2 179.4 179.1 178.7 177.5 177.2 176.9 176.8 177.1 176.7 176.1 175.4 174.4 174.6 175.0 175.0 S21 (mag) (ang) 26.397 93.4 13.193 85.2 8.716 79.3 6.537 74.5 5.110 68.5 4.117 64.2 3.402 60.8 2.896 57.2 2.525 53.2 2.175 48.9 1.897 46.5 1.675 43.6 1.496 41.0 1.348 38.3 1.208 35.7 1.087 33.7 0.996 31.6 0.912 29.7 0.836 27.9 0.748 25.8 0.707 23.6 0.647 23.2 0.591 20.8 0.562 20.0 0.520 17.4 0.485 15.5 0.460 15.6 0.435 15.5 0.407 13.3 0.380 12.2 0.358 10.8 0.327 8.6 0.308 8.0 0.314 8.5 0.284 7.0 0.269 9.7 0.254 6.7 0.250 6.0 0.232 1.9 0.227 7.8
RD12MVS1
MITSUBISHI ELECTRIC 5/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
S12 (mag) 0.016 0.016 0.016 0.016 0.016 0.014 0.014 0.015 0.013 0.013 0.012 0.009 0.011 0.009 0.010 0.007 0.006 0.008 0.005 0.005 0.006 0.004 0.007 0.004 0.004 0.004 0.003 0.003 0.003 0.004 0.004 0.005 0.005 0.004 0.004 0.003 0.007 0.006 0.005 0.008 (ang) 0.3 -6.2 -12.3 -16.7 -18.7 -24.8 -27.4 -32.9 -33.6 -27.8 -29.3 -19.7 -46.4 -51.2 -37.5 -39.4 -76.7 -46.1 -48.1 -46.9 -25.8 -45.0 -49.7 1.3 -46.8 51.2 32.2 -36.9 83.3 29.6 47.6 68.7 60.4 66.9 92.7 68.9 65.3 87.1 90.1 90.1 (mag) 0.700 0.698 0.719 0.732 0.751 0.753 0.784 0.813 0.836 0.839 0.844 0.851 0.873 0.895 0.891 0.898 0.899 0.913 0.925 0.923 0.924 0.923 0.940 0.935 0.934 0.938 0.937 0.943 0.951 0.948 0.944 0.938 0.947 0.949 0.953 0.950 0.947 0.947 0.950 0.949 S22 (ang) -150.9 -161.8 -165.9 -164.9 -166.6 -167.1 -167.7 -167.8 -168.4 -168.9 -169.9 -170.5 -171.1 -172.0 -172.4 -172.9 -173.5 -173.9 -174.8 -175.1 -175.7 -175.9 -176.4 -177.1 -177.9 -177.9 -178.1 -178.9 -179.5 -179.9 179.8 179.6 178.7 178.4 178.1 177.8 177.4 176.6 176.1 175.2
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=900mA)
Freq. [MHz] 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.815 0.802 0.803 0.818 0.829 0.838 0.849 0.855 0.869 0.878 0.886 0.898 0.905 0.908 0.915 0.919 0.922 0.926 0.933 0.937 0.940 0.937 0.937 0.935 0.945 0.948 0.951 0.950 0.946 0.948 0.947 0.948 0.955 0.958 0.954 0.950 0.947 0.950 0.953 0.959 (ang) -150.5 -163.9 -167.8 -169.7 -170.6 -171.5 -171.6 -172.0 -172.9 -173.7 -174.1 -174.3 -174.5 -174.9 -175.8 -176.6 -177.3 -177.7 -177.7 -177.8 -178.5 -179.3 179.7 179.7 179.6 179.7 179.5 178.9 178.0 177.2 177.1 176.9 177.1 176.8 176.2 175.3 174.9 174.9 174.9 174.7 S21 (mag) (ang) 31.656 96.3 15.905 85.5 10.443 78.2 7.776 72.7 6.054 66.0 4.816 60.7 3.945 57.1 3.358 52.9 2.872 48.7 2.459 44.8 2.135 41.8 1.876 38.8 1.671 36.3 1.492 33.5 1.329 31.1 1.188 28.7 1.083 26.9 0.974 25.0 0.894 23.0 0.816 20.9 0.745 19.6 0.700 18.2 0.643 16.2 0.605 14.6 0.549 13.1 0.510 14.1 0.479 12.6 0.454 9.0 0.424 8.9 0.382 7.2 0.370 6.0 0.357 7.4 0.332 4.4 0.323 4.9 0.301 2.7 0.296 2.4 0.284 -1.0 0.252 -0.5 0.251 2.6 0.230 -2.3
RD12MVS1
MITSUBISHI ELECTRIC 6/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD12MVS1
MITSUBISHI ELECTRIC 7/7
10 Jan 2006

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